| Title |
Dislocation Mobility in Silicon Single Crystals |
| Abstract |
The average velocities of 60°-dislocations in silicon single crystals have been measured be Stein and Low method. The stress dependence of dislocation velocities is described as v∝τ^m at a given temperature over the stress range of 0.5∼5 ㎏/㎟. It was observed that stress exponent m depended on temperature. The temperature dependence of dislocation velocities is described as v∝exp (-E/kT) with activation energy of 1.5 electron volt at the resolved shear stress of 2 ㎏/㎟. |