| Title |
Effect of Doping Elements on the Electrical Conductivity of Wustite |
| Authors |
이광학(Kwang Hak Lee); 김경대(Koung Dae Kim); 백영현(Young Hyun Paik) |
| Abstract |
Electrical conductivity measurement was made on synthetic wustite which was respectively doped with Li₂O, CaO, Al₂O₃ and SiO₂ in the temperature range of 20℃ to 1000℃. The A.C. conductivity of the wustite was measured by means of the two prove method. Their electrical conduction were found to be characterized by a typical semiconductor behavior. A plot of logarithm of conductivity versus reciprocal temperature was fairly linear, and the activation energy calculated was approximately 0.12 eV below about 600℃, whereas above that temperature, 0.042 eV. Electrical conductivity of the wustite was increased by adding Li₂O or CaO and decreased by adding Al₂O₃ or SiO₂ into wustite. This behavior could be explained in terms of lattice defect It was also found that the electrical conductivity of wustite was practically proportional to concentration of electron hole i.e. Fe＾(+3) ion in the lattice. |