| Title |
Electrical Resistivity and Magneto Resistance of the Unidirectionally solidified Metal - Semiconductor Eutectic Systems |
| Authors |
안인섭(I . S . Ahn); 유승철(S . C . Yoo); 문인형(I . H . Moon) |
| Abstract |
The dependence of the magneto- and electrical resistance on the composition and growth rates of two phase eutectic was investigated in the unidirectionally solidified Ge-TiGe₂ alloy system. High aligned structure was produced at the growth rate of 6 ㎝/h in the Ge-TiGe₂ eutectic alloys and this structure showed high magnetoresistance at room temperature and at liquid nitrogen temperature. The electrical anisotropic properties due to the isolated alignment of triangular Sb rods were obtained at the growth rates of 1 ㎝/h and 1.5 ㎝/h in the Insb-Sb eutectic alloys. At the low growth rate, structural and electrical anisotropies were found in the Ge-Sb eutectic alloys, and magnetoresistance was not detected in the InSb-Sb and Ge-Sb eutectic systems. |