| Title |
Langmuir Probe Measurement of Plasma Conditions During Activated Reactive Evaporation of Titanium Nitride |
| Authors |
한봉희(Bong Hee Hahn); 주정훈(Jung Hun Joo) |
| Abstract |
TiN was deposited onto phosphorous bronze, NaCl single crystal and p-Si (100) by Biased Activated Reactive Evaporation (ARE). The influence of plasma conditions during deposition on TiN film`s preferred orientation and resistivity was investigated using electrostatic plasma probe. Electron temperature and electron density were measured at different substrate biases and ARE discharge currents. Films deposited by negative bias, therefore high electron temperature, showed a strong (200) preferred orientation and a low electrical resistivity with high hardness. High ARE discharge current, therefore high electron density, on the other hand, enhanced a (111) texture and showed higher resistivity. The cause of (200) preferred orientation by high negative bias is considered to be that titanium ions of upper critical energy can bombard growing film surface to transform (111) texture into (200) preferred orientation by deep impact insertion of N between Ti atoms. |