| Title |
Effect of Gas Inflow on Selectivity and Sheet Resistance of W - film deposited by LPCVD |
| Authors |
류창섭(Chang Sup Ryu); 이정중(Jung Joong Lee); 금동화(Dong Wha Kum); 주승기(Seung Ki Joo) |
| Abstract |
A hot-wall type reactor has been designed for chemical vapor deposition at low pressure(LPCVD), and deposition of W on an oxide patterned Si-wafer has been studied. Utilizing scanning electron microscope and cross-sectional transmission electron microscopy, selective deposition of W only on the exposed Si surface has been confirmed. It has been observed that the microstructure of the W-film is strongly affected by flow rates, i.e., partial pressures of reaction gases(WF_6 H₂ and Ar). Fourpoint probe measurement of the thin film showed that porosity in the LPCVD W-film is one of major causes which increases sheet resistivity of the film, and the quantity of porosity is affected by reaction species and individual flow rates. |