| Title |
Evolution of surface Morpology During LPE growth of Hg0.7Cd0.3Te |
| Authors |
임성욱(S . W . Lim); 최인훈(I . H . Choi); 김재묵(J . M . Kim); 송원준(W . J . Song); 문성욱(S . W . Moon); 서상희(S . H . Suh) |
| Abstract |
HgCdTe is the most widely used material for infrared photodetectors. HgCdTe epi-layers were grown on CdTe substrates with (111) orientation, using a slider LPE(Liquid Phase Epitaxy) technique. The change of surface morphology during LPE growth of Hg_(0.7)Cd_(0.3)Te was investigated. The wave-like surface at the initial stage of growth has transformed gradually to the terrace-like surface and the terrace width has increased with increasing growth time. Infrared tansmission was used to determine the composition of HgCdTe epi-layers. |