| Title |
Effects of Hg - Annealing at Different Temperatures on the electrical Properties of LPE Grown Hg0.8Cd0.2Te |
| Authors |
문성욱(S . W . Moon); 최종술(C . S . Choi); 정용택(Y . T . Jeong); 김재묵(J . M . Kim); 서상희(S . H . Suh) |
| Abstract |
Hg_(0.8)Cd_(0.2)Te epitaxial layers were grown by an LPE(liquid phase epitaxy) process. As-grown Hg_(0.8)Cd_(0.2)Te showed p-type conductivity with a carrier concentration of 8.8×10^(17)㎝^(-3). Annealings of as-grown Hg_(0.8)Cd_(0.2)Te wafers in Hg-atmosphere were performed over the temperature range 200 to 430℃. Annealings below 300℃ resulted in n-type conductivity with carrier concentrations from 10^14 to 10^15 cm^-3 and showed a maximum value at about 260℃. p→in type conversion temperature is thought to be determined by Hg-interstitials rather than residual donor impurities. The phase boundary of Hg_(0.8)Cd_(0.2)Te on the metal-rich side could be obtained. |