| Title |
Effect of Cu Addition on Microstructure and Reliability of the Magnetron - Sputtered Al - 1 % Si thin Film |
| Authors |
고철기(C . G . Ko); 김재갑(J . K . Kim); 조경수(G . S . Cho); 김헌도(H . D . Kim) |
| Abstract |
Al-1%Si thin films with a small amount of copper were deposited on SiO₂ in a single wafer magnetron-sputtering system, followed by BPSG(boro-phospho-silicate glass) deposition. Hillock, grain size variations and etchability of metal films were investigated scanning electron and optical microscopes. Cross-sectional transmission electron microscopy analysis showed that CuAl₂ precipitated along the interface of BPSG and the metal film in as-deposit condition and they were show redistributed homogeneously after annealing treatment. These results were consistent with those obtained from AES and RBS. Electromigration tests were conducted for the metal films with 0.5% and 2% copper contents. The increase in electromigration resistance may be attributed to the homogeneous redistribution of copper in Al-1%Si-X%Cu metal films. |