| Title |
Dielectric Properties of Ta2O5 Thin Film formed by Thermal oxidation |
| Authors |
박상균(Sang Kyun Park); 박종완(Jong Wan Park) |
| Abstract |
Ta₂O₃, thin films on p-type (100) Si substrate were prerared by thermal oxidation at 450∼650℃ of DC magnetron sputtered tantalum films. Capacitance and relative dielectric constant of the Ta₂O_5 film were found to be 1.71 fF/μ㎡ and 31.7, respectively, at 500℃, 2h. Leakage current had a minimum value of 5×10^(-6)A/㎠ for 1MV/㎝ at 600℃, 1h. It was found that the 650℃ 1h oxidation treatment induced formation of crystalline δ-Ta₂O_5 of hexagonal structure The dc conduction characteristics of Ta₂O_5 films can be interpreted by assuming Poole-Frenkel conduction. the dielectric properties of the tantalum oxide films were improved by proper oxidation treatments. |