| Title |
Preparation of Titanium Boride Films by Chemical Vapor Deposition (2) ( Titanium Boride films on WC Substrate ) |
| Authors |
김수식(Soo Sik Kim); 정병근(Byung Kn Jeong); 민정식(Jeong Sik Min) |
| Abstract |
TiB₂ coatings on WC substrates were investigated using BCl₃-TiCl₄-H₂ system by CVD process at various pressure conditions. The measured microhardness values of coated layer were 3800 KHN under 40 torr of pressure and 3280 KHN 760 torr of pressure at, the reaction temperature of 1200℃ The coated layer displayed a-axis preferred orientation, and the average lattice parameters were 3.034Å for a-axis and 3.231Å for c-axis. Diffusion controlled process, had a small activation energy of 3㎉/㏖, dominated at higher temperature than 910℃, while chemically controlled process, had a high activation energy of 24㎉/㏖, governed at lower temperature than 910℃. |