| Title |
Growth Rate of MoSi2 Layer Formed by CVD of Si on Mo Substrate and Oxidation Behavior of MoSi2 / Mo Couple |
| Authors |
윤진국(Jin Kook Yoon); 변지영(Ji Young Byun); 이강욱(Kang Wook Lee); 이종무(Jong Moo Lee); 김재수(Jee Soo Kim) |
| Abstract |
Growth rate of MoSi₂ layer formed by the chemical vapor deposition of Si on Mo substrate and oxidation behavior of Mo coated by MoSi₂ were investigated and the experimental data were analyzed by theoretical parabolic rate equations for growth of intermediate phases in a Si-Mo diffusion couple. The equations well described the facts that growth of MoSi₂ layer on Mo and Mo_5Si₃ layer formed at interface in MoSi₂/Mo couple during oxidation test obeyed the parabolic rate law. The theoretical lifetime of MoSi₂ layer against oxidation was proportional to the square of its thickness. However, coating lifetime was substantially less than the predicted one because MoSi₂ layer was not defect-free. Activation energy of growth of MoSi₂ layer on Mo substrate by the CVD method was 11.6㎉ per mole. |