| Title |
The effect of impurities on the solidification behavior of thin silicon film in SOI - ZMR |
| Authors |
이시우(Si Woo Lee); 주승기(Seung Ki Joo) |
| Abstract |
Effects of dopant additions on interface stability in ZMR(Zone Melting Recrystallization) of silicon thin films have been investigated through computer simulation and experiments. According to computer simulation, it has been found that critical scanning speed (V^*) exists such that the critical wavelength λ at the solidifying interface increases with scanning speed below (V^*) due to radiative supercooling, while λ decreases with scanning speed above (V^*) due to constitutional supercooling. It turned out that (V^*) decreased with additions of B and P dopants on silicon thin films by ion implantation before ZMR and interface stability change with respect to scanning speed agreed well with expectations from computer simulation. |