| Title |
Effects of Solidification Parameters on the Interface Morphology and the Defect Formation in Directional Solidification of Silicon Thin Films |
| Authors |
이시우(Si Woo Lee); 주승기(Seung Ki Joo) |
| Abstract |
Poly-silicon thin films were crystallized by ZMR(Zone Melting Recrystallization) using a halogen lamp as a heat source and the effects of intensity of the radiative heat source and the substrate heating temperature on the solidification behavior were investigated through computer simulation and experimental observation. It has been found that the solidifying front becomes stable with increase of intensity of the radiative heat source and substrate heating temperature, which is consistent with computer simulation results. According to computer simulations, degree of supercooling is mainly responsible for the solidifying front instability and dendritic and cellular growth which occured when the solidifying front was unstable disappeared with increase of intensity of the radiative heat source and substrate heating temperature and random defects in recrystallized thin film was observed. SOI/MOSFET fabricated in this work showed the electron mobility of 1000㎠/Vsec. |