| Title |
Effect of S and Te on Rotational Stacking Faults of the Fine Flake Graphite Solidified from Fe - C - Si Alloys |
| Abstract |
The fine flake type graphite, directionally solidified from Fe-3.4 wt % C-2 wt % Si alloys doped with either 0.02 wt % S or 0.05 wt % Te, was investigated by using a transmission electron microscope. The presence of rotational stacking faults was observed in more than 90% of the graphite samples examined here, regardless of the doping element S or Te. The two elements were, however, found to have a distinctly different effect on the selection of rotation angles. The S-doping induced in the fault formation the various rotation angles predicted by theory, while the Tedoping induced angles mostly close to 30 degrees. |