| Title |
Structural Characterization of A1N Thin Film by Symmetric Bragg Diffraction and Grazing Incidence X-ray Diffaction |
| Authors |
김기홍(Ki Hong Kim); 장창환(Chang Hwan Chang); 구양모(Yang Mo Koo) |
| Abstract |
The structure of AlN thin film deposited on an Al₂O₃(0001) substrate is examined using symmetric Brags diffraction and Grazing Incidence X-ray Diffraction(GID) methods. A new five-circle goniometer is adapted to carry out the GID experiments for convenience and accuracy. This goinometer consists of a conventional four-circle goniometer and a new circle segment inserted between the θ-2θ circles and the Eulerian cradle of the four-circle goniometer. It is found that the orientational relationship between AlN thin film and Al₂O₃ substrate is AlN[10 10￣]∥Al₂O₃[11 20￣] and AlN(0002)∥Al₂O₃(0006). The strain parallel to the interface is 1.0% and that perpendicular to the interface is 1.1%. The thin film is composed of small sized mosaic blocks. The size and orientational spread of the mosaic crystallites is 98Å and 2.4˚ parallel direaction to the interface, and 74Å and 2.7˚ perpendicular direction to it. |