| Title |
Transmission Electron Microscopy Study on the Formation Mechanism of the As - Deposited Mixed - Phase LPCVD Silicon Thin Films |
| Authors |
김진혁(Jin Hyeok Kim); 이정용(Jeong Yong Lee); 이승창(Seung Chang Lee); 남기수(Kee Soo Nam) |
| Abstract |
Transmission electron microscopy study on the formation mechanism of the as-deposited mixed-phase silicon thin films, deposited on SiO₂ at temperature range 570℃-580℃ by low pressure chemical vapor deposition and annealed at 570℃, has been carried out. Though most part of as-deposited films had an amorphous phase, some crystallites which had a random shape were observed at Si/SiO₂ interfaces. The higher the deposition temperature was, the larger the size of the crystallites was. No remarkable growth of preexisting crystallites was observed in the film deposited at 570℃ for 28 min. and annealed at 570℃ for 1 h. Crystallites which had an elongated elliptical shape were observed in the film annealed at 570℃ for 3 h. The size of the elliptical shaped grains was larger than that of the crystallites grown from preexisting crystallites. From above results, it is concluded that as-deposited mixed-phase silicon films are formed not because films, deposited as an amorphous phase, are crystallized during the deposition process but because films are deposited as a crystalline phase at the initial stage of the deposition process and then deposited as an amorphous phase. |