| Title |
A Study on the Growth Process and Properties of Nb2O5 Thin Films Formed by MOCVD |
| Authors |
이성훈(Sung Hun Lee); 윤재홍(Jae Hong Yoon); 이찬규(Chan Gyu Lee); 김명호(Myong Ho Kim); 박태곤(Tea Gon Park); 삼본극구(Katsuhisa Sugimoto) |
| Abstract |
By the Nb(OC₂H_5)_5 source, Growth process of Nb₂O_5 films formed by AP-_MOCVD has been examined by in-situ ellipsometry as a function of the substrate temperature, carrier gas flow rate, source temperature and reactant O₂ gas flow rate. Δ-Ψ curve obtained in experimental results corresponded to the theorical Δ-ψ curve of transparant homogenious film, and showed a rectilineal growth behaviour of the one stage at a low temperature range of 473∼673K and indicated a rectilineal growth behaviour of the two stage at the high temperature of 673∼753K. A refractive index meaning density of the deposited film increased until 673K of the substrate temperature but decreased above 673K. The thin film deposited at 723K showed the most excellent corrosion resistance, because the deposited film was crystallized into the δ-Nb₂O_5 above 723K. Dielectric constant of Nb₂O_5 thin films deposited at 675K show the maximum vlue. Dielectric constant of Nb₂O_5 thin films deposited above 675K was decreased. |