| Title |
A Study on the Adhesion of Titanium Nitride Films Produced by Thermally Activated Chemical Vapor Deposition at Low Temperture |
| Authors |
민우식(Woo Sig Min) ; 박종익(Jong Ik Park) ; 이정중(Jung Joong Lee) |
| Abstract |
Using TiCl₄ and NH₃ as reactive gases, titanium nitride(TiN) films could be deposited by chemical vapor deposition(CVD) at much lower temperatures(<700℃) than conventionally used ones for TiN deposition. NH₃ gas nitriding method was used to improve the adhesion of TiN film on M2 high speed steel. The nitrides formed on the substrate surface consisted of CrN and ε-Fe_(2-3)N. They had influence on the nucleation and growth mechanism of TiN, which led to more random orientation and coarser columnar grain of TiN films. |