| Title |
A Study on the Growth Behaviors of MoSi2 Diffusion Layer Formed by CVD of Si on Mo Substrate |
| Authors |
윤진국(Jin Kook Yoon); 변지영(Ji Young Byun); 김재수(Jae Soo Kim); 최종술(Chong Sool Choi) |
| Abstract |
The growth behaviors of MoSi₂ diffusion layer formed by the reaction of the chemical vapor deposited Si with Mo substrate have been investigated in the temperature range between 850℃ and 1400℃ using coldwall horizontal reactor and SiCl₄-H₂system. The thickness of MoSi₂ diffusion layer was linearly increased with the square root of total gas flow rate of reactants and with the reactants ratio(SiCl₄/H₂) of 0.09 but constant over 0.09 due to etching process of Si by HCl at the deposition temperature of 1100℃. The growth of MoSi₂ diffusion layer on Mo substrate obeyed the parabolic rate law and rate constant was 2.26 ×10^(-5) ㎝ sec^(1/2) at 1100℃. The formation process of MoSi₂ diffusion layer was controlled by gas phase diffusion of reactants through a boundary layer to Mo substrate over 1000℃ and activation energy for the growth of it was 102 kJ/mole. But the rate determining step was solid diffusion of Si into it below 900℃ because activation energy for the growth of it was 223 kJ/mole, which was similar to that for diffusion of Si in MoSi₂ |