| Title |
A Study on the Pd Induced Lateral Crystallization Mechanism of Amorphous Si Thin Films |
| Authors |
김태경(Tae Kyung Kim); 이석운(Seok Woon Lee); 이병일(Byung Il Lee); 주승기(Seung Ki Joo) |
| Abstract |
A new method of low temperature(≤500℃) crystallization of a-Si films was developed and crystallization mechanism was proposed. A few tens of micron long area from Patterned Pd films area could be crystallized in a short time at 500℃ by Metal-Induced Lateral Crystallization without any metal incorporations. The mechanism of the enhanced crystallization of a-Si film was studied by the microstructure analysis at the initial stage of the crystallization, by which the mechanism of MILC can be explained. In the case of Pd, crystallization of a-Si was initiated at the preformed Pd2Si in an a-Si matrix. The Pd2Si precipitates were separated into fine particles, and propagated into the a-Si matrix transforming a-Si into c-Si behind themselves. The growing direction of crystallized Si was <111>, which coincided with the epitaxial direction of Si with Pd2Si. |