| Title |
Research Paper - Electronic. Magnetic & Optical Materials : Effect of Stuffing of TaN on the Diffusion Barrier Property in Al / TaN / Si System |
| Authors |
윤태식(Tae Sik Yoon); 조성래(Sung Lae Cho); 민석홍(Seok Hong Min); 김기범(Ki Bum Kim) |
| Abstract |
The stuffing effect of TaN on the diffusion barrier properties for Al was investigated. The stuffing of TaN was performed by annealing at 500℃ for 30 minutes in N₂ ambient. After Secco etching, etch pits appeared on Si surface at 575℃ in both as-deposited and stuffed TaN cases, but the number density of etch pit in stuffed case was slightly low. AES depth profile indicated that there was no noticeable difference in the distribution and concentration of oxygen in TaN layer between as-deposited and stuffed TaN. This is believed to be responsible to the insignificant improvement of diffusion barrier properties by stuffing process. The minimal incorporation of oxygen into TaN by stuffing process was attributed to the microstructure of TaN. TEM investigation reveals that the grain size and grain boundary spacing of TaN deposited by reactive sputtering are very small so that oxygen can not penetrate into TaN film by stuffing process. |