| Title |
Electrostatic bonding of glass and Si using Al thin film interlayer for residual stress relief |
| Authors |
문제도(J . D . Mun) ; 최영환(Y . H . Choi) ; 오재열(J . Y . Oh) ; 조영래(Y . R . Cho) ; 정호수(H . S . Jeong) |
| Abstract |
Al deposited Si was electrostatically bonded to glass with different coefficient of thermal expansion. Bondings were achieved around 150℃ and cracks were observed in specimens bonded above 200℃ whereas no bondings were achieved at 100℃. This paper investigates the effect of bonding temperature and applied voltage on the bonding property of Al-deposited Si/glass bonded couple and the method of low temperature electrostatic bonding. |