| Title |
Characterization of Intermetllic Compounds Formed at the Interface between In Solder and BLM ( Au / Ni / Ti ) |
| Authors |
이창용(Chang Yong Lee) ; 김영호(Young Ho Kim) ; 김창수(Chang Soo Kim) |
| Abstract |
Interdiffusion and intermetallic compound formation between Ni thin film and molten In have been investigated in flip chip bonding process. In films were deposited on the BLM (Au/Ni/Ti)/Si substrates by thermal evaporation. Heat treatments were performed in the RTA (Rapid Thermal Annealing) system and/or in a furnace. Intermetallic compound formation was charactered by XRD. Ni_(10)In_(27) and Ni₂In₃, phase are formed at the interface between In and Ni. Ni_(10)In_(27) is observed in all specimens after heat treatment, but the formation of Ni₂In₃, phase depends on the thermal treatment conditions. The thicker intermetallic compound Layers were formed when the specimens were heat treated in the furnace. The formation and the thickness of intermetallic compounds were related to the kinetics of In solder reaction and interdiffusion. |