| Title |
Thermoelectric Properties of CuBr-doped n-type 85% Bi2Te3-15% Bi2Se3 Thermoelectric Materials |
| Authors |
황종승(J . S . Hwang) ; 현도빈(D . B . Hyun) ; 오태성(T . S . Oh) ; 이은하(E . H . Lee) ; 이동희(D . H . Lee) |
| Abstract |
For the CuBr-doped 85% Bi₂Te₃-15% Bi₂Se₃ single crystals, the temperature dependences of Seebeck coefficient, electrical resistivity, thermal conductivity, and ftgure-of-merit have been characterized at temperatures ranged from 77K to 600K. Comparing to 85% Bi₂Te₃ 15% Bi₂Se₃, the (m^*/m_0)^(3/2). μc of the CuBr-doped 85% Bi₂Te₃ - 15% Bi₂Se₃ specimens was higher than that of the undoped specimens indicating that the addition of CuBr was effective for the improvement of figure-of-merit. Electron concentration was increased with increasing CuBr content, decresing the Seebeck coefficient and electrical resistivity, and shifting the maximum of figure-of-merit to higher temperatures. A maximum figure-of-merit obtained in these experiments was 2.2×10^(-3)/K for the 0.03 wt% CuBr-doped 85% Bi₂Te₃ 15% Bi₂Se₃ single crystal. |