| Title |
A Study on the Chemical Vapor Deposition of Si on Mo Substrate |
| Authors |
윤진국(Jin Kook Yoon); 정병성(Byoung Seong Jeong); 고흥석(Hung Suk Ko); 김재수(Jae Soo Kim); 최종술(Chong Sool Choi) |
| Keywords |
Molybdenum; Silicon; CVD; Molybdenum disilicide |
| Abstract |
Under deposition conditions limited by gas transport, the chemical vapor deposition of silicon on molybdenum substrate was investigated in the temperature range of 1173K and 1473K using hot-wall horizontal reactor and SiCl4-H2 gas mixtures. The deposition amount of silicon increased proportionally to the square root of total flow rate of reactants in which the outer layer of molybdenum substrate was pure silicon at 1173K, but to the quarter of that in which that was MoSi2 at 1473K. The deposition rate of silicon obeyed linear law at pure silicon but parabolic law at MoSi2. This suggested that the deposition rate of silicon was dependent on the concentration of silicon on substrate surface because the gaseous diffusion flux of reactants through a boundary layer was a function of that. This phenomenon was confirmed by the results obtained at 1298K that the deposition rate of silicon obeyed parabolic law below 4.3 hrs and changed linear law over 4.3 hrs. |