| Title |
Electrical and Thermoelectric Properties of 0.2wt% SbI3-doped 90% Bi2Te3-(10-x)% Sb2Te3-x% Sb2Se3 Alloys |
| Authors |
현도빈(D . B . Hyun) ; 황종승(J . S . Hwang) ; 심재동(J . D . Shim) ; 오태성(T . S . Oh) ; (V . A . Barabash) |
| Abstract |
Electrical and thermoelectric properties of the 0.2 wt% SbI₃- doped n-type 90% Bi₂Te₃-(10-x)% Sb₂Te₃-x% Sb₂Se₃ single crystals have been investigated at temperatures ranging from 77K to 600K. The carrier concentration and Seebeck coefficient were independent of the Sb₂Se₃ content. With increasing the Sb₂Se₃ content, the electrical resistivity increased and Hall mobility decreased, which was attributed to the lattice distortion. The thermal conductivity decreased with increasing Sb₂Se₃ content, which was mainly due to the decrease of the electronic thermal conductivity. With increasing the Sb₂Se₃ content, the maximum figure-of-merit decreased and was shifted to the lower temperature. The 0.2 wt% SbI₃-doped 90% Bi₂Te₃-5% Sb₂Te₃-5% Sb₂Se₃ single crystal showed the maximum figure-of-merit of 1.65×10^(-3)/K at 280K. |