| Title |
Kinetics of Chemical Vapor Deposition of Silicon on Ni Substrate From a Gas Mixture of SiCl4 and H2 |
| Authors |
윤진국(Jin Kook Yoon) ; 유재은(Jae Eun Yoo) ; 맹선재(Sun Jae Maeng) ; 정병성(Byoung Seong Jeong) ; 김재수(Jae Soo Kim) ; 최종술(Chong Sool Choi) |
| Abstract |
Kinetics of chemical vapor deposition of silicon on Ni substrate was investigated in the temperature range between 1173K and 1323K using hot-wall reactor and a gas mixture of SiCl₄ and H₂ The deposition rate of silicon was proportional to the square root of total flow rate of reactants and constant at a rate above 100sccm at 1273K and 300sccm at 1273K, respectively. The dependence of deposition rate of silicon on Cl/H input ratio was explained by the combined effect of that on the deposition rate and etching rate of silicon. Kinetics of silicon deposition obeyed the linear rate law. The deposition rate of silicon was controlled by the gas transport process through a gas boundary layer to the Ni substrate over 1248K and the activation energy for silicon deposition was 2.5 ㎉/mole. However, the rate determining step was chemical reaction process for silicon deposition below 1235K because the activation energy was 26.5 ㎉/mole, which was similar to that for silicon deposition on Si substrate. |