| Title |
Research Paper / Composite Materials : Interfacial Phenomena in the SiC/2014A1 Composite : (I) Modification of Interfacial Characteristics |
| Authors |
이재철(Jae Chul Lee),안재평(Jae Pyoung Ahn),시충양(Zhongliang Shi),이호인(Ho In Lee) |
| Abstract |
Methodologies both to avoid the formation of Al₄C₃ and to tailor the interfacial structures in the SiC/2014Al composite were demonstrated. Modification of the interfacial structures in the SiC/2014Al composite were made by forming SiO₂ layers on the surfaces of SiC via the passive oxidation at elevated temperatures. In the 2014Al composite reinforced oxidized SiC, nano-sized MgAl₂O₄ and Si crystals were observed to form at the interfacial region as a result of the reaction between the SiO₂ layer and the matrix. On the other hand, in the case of the 2014Al composite reinforced unoxidized SiC, SiC were found to react with Al to form both Al₄C₃ and Si. Crystallographic structures of the observed interfacial products were characterized using EDS and CBED of TEM. |