| Title |
Pesearch Paper / Electronic , Magnetic & Optical Matrials : The Effects of the Growth Conditions on the Thermoelectric Properties of n - Type 90 % Bi2Te3-10% Bi2Se3n Single Crystals Grown by the Zone Melting Method |
| Authors |
하헌필(H . P . Ha),현도빈(D . B . Hyun),황종승(J . S . Hwang),심재동(J . D . Shim),오태성(T . S . Oh) |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Abstract |
The effects of the zone melting temperature and growth rate on the thermoelectric properties for 0.15 wt% CdI₂ and 0.05 wt% CdCl₂ doped 90% Bi₂Te₃-10% Bi₂Se₃ single crystals were investigated. The Seebeck coefficient and electrical resistivity of the 0.15 wt% CdI₂ doped single crystals were initially decreased along the ingots due to the condensation of iodine in the melts. The sharp increase of the Seebeck coefficient and electrical resistivity at the last-to-freeze region were considered as results of the evaporation of iodine from the molten zone and the compensation of electrons due to the formation of the antistructure defects. The figure-of-merit was enhanced with increasing the zone melting temperature and lowering the growth rate. The single crystels grown at the zone melting temperature of 800℃ and the growth rate of 0.1 ㎜/min exhibited the maximum figure-of-merit of 2.8×10^(-3)/K. |