| Title |
A Study on the Characteristics of the Ni-based Gate Metallization of the GaAs MESFET |
| Authors |
류성욱(Seong Wook Ryu),장호원(Ho Won Jang),이종람(Jong Lam Lee) |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Abstract |
Schottky enhancement was demonstrated experimentally by using MESFET with Ni/Al/Ni gate. Forward I-V characteristics showed that Schottky barrier height increased from 0.77 eV to 0.89 eV when the contacts were annealed at 350℃ for 15 min. From XRD analysis, we found that the ternary phases, Ni_xGaAs, were formed at 200℃ and NiAl₃ and Ni₂Al₃ phase were dominant at 325℃. As the Sohottky barrier height increased, current density level deceased at same gate voltage and the maximum transconductance, ｇ_m , was shifted to the higher gate voltage. In addition, pinch-off voltage and threshold voltage were increased by 0.1 voltage. |