| Title |
Leakage Current Characteristics and Ferroelectric Properties of Lead Zirconate Titanate Films Deposited by Chemical Vapor Deposition |
| Authors |
정수옥(Su Ock Chung),이원종(Won Jong Lee) |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Abstract |
Leakage current characteristics and ferroelectric properties of lead zirconate titanate(PZT) films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition were investigated. Pt/Ti and RuO₂ were used as bottom electrodes for PZT film. The nucleation of PZT perovskite phase was more difficult on RuO₂ electrodes than on Pt electrodes, and the PZT films grown on RuO₂ tend to have PbO_x second phase. PZT film without PbO_x phase could be grown on RuO₂ by introducing a proper seed layer and by controlling the flow rates of Metal-organic source (particularly Pb(DPM)₂). For the PZT films on RuO₂ with improved microstructure, an excellent leakage current density of 10^(-6)A/㎠ at 100 ㎸/㎝ was obtained from the Pt(top)/PZT/RuO₂ capacitor. Leakage current characteristics and ferroelectric properties of PZT capacitors with four different electrode configurations were investigated. The RuO₂∥ RuO₂ capacitor showed a leakage current density of as high as 10^(-4) A/ ㎠ at 100 ㎸/㎝, which was attributed to the high temperature processes for RuO₂ top electrodes fabrications. The fatigue characteristics of PZT capacitors depend on the electrode material rather than the microstructure of PZT films. |