| Title |
Research Paper / Surface Treatment : Removal of Cr and Zn Impurities from the Si Substrate using the Remote H2 Plasma |
| Authors |
이성욱(Seung Wook Lee),이재갑(Jae Gab Lee),이종무(Chong Mu Lee) |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Abstract |
The removal of Cr and Zn impurities on Si substrates using the remote H₂ plasma was investigated. To determine the optimum process condition, the remote H₂ plasma cleaning was conducted for various rf-powers and plasma exposure time. The optimum process parameters for Cr and Zn removal were set at the rf-power of 20W and plasma exposure of 5 min. The concentrations of Cr and Zn impurities were reduced by more than a factor of 2 and the minority carrier lifetime increased after the remote plasma H₂ cleaning. Also RMS roughness decreased by more than 30%∼50% after the remote H₂ plasma cleaning. AFM analysis results also show that the remote H₂ plasma cleaning makes no damage to the Si surface. The removal mechanism of the Cr and Zn impurities in the remote H₂ plasma cleaning is proposed to be the lift-off mechanism during the removal of the underlying chemical oxides. |