| Title |
Electronic , Magnetic & Optical Materials : Indium-Tin Oxide (ITO)/Si Contacts with In and Sn Diffusion Barriers |
| Authors |
유호진(Ho Jin Ryu),강진모(Jin Mo Kang),한영건(Young Gun Han),김동환(Dong Hwan Kim),박정호(Jung Ho Pak),박원규(Won Kyu Park),양명수(Myoung Su Yang) |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Abstract |
Indium and tin layers were used as the diffusion barriers between the indium-tin oxide (ITO) and poly-Si in order to reduce the contact resistance. ITO/Si contacts should be adopted in thin-film transistor liquid crystal display (TFT LCD) for simplifying the fabrication process. For 5 ㎚ thick In and Sn layers, 10-minute annealing at 250℃ was performed to minimize the loss in the optical transmittance. With In and Sn layers, contact resistance values of 5×10^(-3) ∼ 4×10^(-3)Ω㎠ were obtained. These values were higher than those measured from the conventional ITO/Mo/Al/Si contacts (5×10^(-5) Ω㎠∼4 ×10^(-4)Ω㎠) but. lower than those obtained from ITO/Si contacts (about 1×10^(-1)Ω㎠) Sn was found to be stable after the annealing but In lost its function as a diffusion barrier by diffusion into Si. |