| Title |
Structural and Physical Properties of Indium TiN Oxide Films Deposited on Porous Silicon by r.f Sputtering |
| Authors |
홍광표(Kwang Pyo Hong); 권덕렬(Duk Ryel Kwon); 박현아(Hyun Ah Park); 이종무(Chong Mu Lee) |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
Porous silicon; Indium Tin Oxide; AFM; SEM; XRD |
| Abstract |
Transparent conducting indium tin oxide (ITO) films are deposited by rf-sputtering at a constant power of 400W in Ar atmosphere on the porous silicon (PS) layers anodized on p-type (100) Si wafers. At three successive stages of deposition for 10, 20 and 30 min. respectively, the growth of ITO on PS is thoroughly investigated by AFM, SEM and XRD techniques. The features of growth on other substrates like single crystal p-type (100) silicon, quartz and glass are also taken into consideration. The influence of ITO microstructure on the porous silicon interface is correlated with the electrical and luminescent behavior of the resulting heterojunction diode structure. |