| Title |
The Effect of Electric Field on the Microstructure of Polycrystalline Silicon Thin Film Grown by MILC Method |
| Authors |
안지수(An Ji Su); 주승기(Ju Seung Gi) |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
MILC; FE-MILC; Ni ion Ni Vacancy Hopping Model; FE-SEM; Polycrystalline silicon |
| Abstract |
FE-MILC(Field Enhanced Metal Induced Lateral crystallization) growth rate of amorphous silicon thin film and its microstructure were intensively investigated. In the case of applying E-field, the growth rate was drastically increased toward (+) pole direction, while the growth rate toward (-) pole was decreased. It was revealed that the microstructure of MILC area was changed by applying E-field and its direcction, which was investigated by FE(Feild-Emission)-SEM. These Phenomena can be explained by hopping model of Ni ion and Ni vacancy in the NiSi_(2) phase and its interface at the front pf MILC region. (Received February 2, 2004) |