| Title |
Effect of Stress on Interconnect Reliability of Microelectronic Devices |
| Authors |
박영배(Young Bae Park); 전인수(In Su Jeon) |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
Thermal stress; Metal interconnect; Aspect ratio; Passivation dielectrics; Al-Cu; reliability |
| Abstract |
The volume-averaged hydrostatic parts of thermo-mechanical stresses in the metal interconnects determined by X-ray diffraction (XRD) and finite element analysis are compared with each other. Al-Cu lines with PE-SiN(plasma enhanced CVD nitride) and FOx(Flowable Oxide) passivations and with various line aspect ratios are selected for this study. For the numerical calculation, the stress concentration effect around the edge of Al-Cu lines and elastic-plastic behavior of the metal line following its hardening rule are considered. Volume-averaged stresses measured by XRD method are compared to the calculated values. The probable difference between the hydrostatic stresses obtained from XRD method and finite element method is finally analyzed. |