| Title |
Agglomeration of Copper Films by H2 Annealing |
| Authors |
배준우(Joon Woo Bae); 임재원(Jae Won Lim); (Minoru Isshiki) |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
Copper; Void; Agglomeration; Resistivity; Thin film |
| Abstract |
The agglomeration and time dependence of Cu films in Cu(100 nm)/Ta(50 nm)/Si structure deposited by ion beam deposition was examined. Copper thin films were annealed at 650℃ for 1 to 60 min in hydrogen atmosphere. The surface morphology, crystalline microstructure and electrical resistivity were investigated by field-emission scanning electron microscopy, X-ray diffraction and Van der Pauw method, respectively. Experimental results revealed that the nucleation and growth of voids ocurred in the copper film annealed for 5 min. Further annealing made the film a connected island structure and then isolated island structure. |