| Title |
CuPt-type ordering in CdxZn(1-x) Te Epitaxial Layers Grown on GaAs (001) Substrates by Molecular Beam Epitaxy |
| Authors |
이호성(H. S. Lee); 이정용(J. Y. Lee); 김태환(T. W. Kim); 권명석(M. S. Kwon); 박홍이(H. L. Park) |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
CuPt; Atomic ordering; CdZnTe; Transmission electron microscopy |
| Abstract |
We have studied an atomic ordering and ordered domains in Cd_(x)Zni_(1-x),Te epilayers grown by molecular beam epitaxy on ZnTe buffer layers. The composition of Cd_(x)Zni_(1-x)Te thin films was determined by X-ray diffraction patterns using the Vegard`s law. Selected area electron diffraction pattern and high-resolution transmission electron microscopy measurements were performed in order to investigate the ordered structure and ordered domains in Cd_(x)Zni_(1-x),Te thin films. The strong contrast modulations along the [001] direction parallel to the growth direction were observed in samples with composition x = 0.15~0.76. A superstructure reflection spots corresponding to a CuPt-type ordering were observed. Ordered domain regions were randomly distributed in Cd_(x)Zni_(1-x),,Te thin films. A possible atomic arrangement of and a formation mechanism for the CuPt-type ordered structure in the Cd_(x)Zni_(1-x);Te epitaxial layer are presented based on the TEM results. These results provide important information on the microstructural properties for enhancing efficiencies of the devices operating at the blue-green region of the spectrum. (Received July 12, 2004) |