| Title |
Silicides from Ni/Co/Si Structure |
| Authors |
송오성(Oh Sung Song); 정성희(Seong Hwee Cheong); 정영순(Young Soon Jung) |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
Silicidation; Ni/Co silicide; RTA; Ternary compound; Composite silicide |
| Abstract |
The silicide layer used as a diffusion barrier in microelectronics is typically required to be below 500.E thick, and the silicides also need to have low contact resistance at high processing temperatures. We fabricated 150ÅNi/150A-Co/p-Si(100) samples with a thermal evaporator, and annealed the samples for 40 seconds at temperatures ranging from 700℃ to 1100℃ using rapid thermal annealing. Sheet resistance of the annealed sample stack was measured with a four point probe. In addition, we investigated microstructural and compositional changes during annealing using transmission electron microscopy and auger electron spectroscopy. The sheet resistance measurements for our proposed Ni/Co composite silicide was below 5 Ω/Sq.. Moreover our newly proposed silicides were stable with the additional elevated annealing at 900℃ for 30 min. Microstructures and Auger depth profiling showed that the silicides in our samples were consisted of Ni-rich and Co-rich ternary compound. Our result implies that Ni/Co composite silicide may have excellent high temperature stability which can be employed in sub-0.1 μm CMOS process. (Received September 24, 2004) |