| Title |
Effect of Bonding Stress on the Contact Resistance of the Sn/Ag Bump for Chip-on-Glass Bonding Using Non-conductive Adhesive |
| Authors |
이광용(Kwang Yong Lee); 이윤희(Yoon Hee Lee); 김영호(Young Ho Kim); 오태성(Tae Sung Oh) |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
Electronic packaging; Chip on glass; Flip chip; Sn Bump; Contact resistance |
| Abstract |
Chip-on-glass bonding using nonconductive adhesive was accomplished with joining of the Sn/Ag bumps, and the average contact resistance of the Sn/Ag bump was measured with variation of the bonding stress. Average contact resistance of the Sn/Ag bump could be obtained from the slope of the curve for daisy chain resistance vs. number of Sn/Ag bumps. With increasing the bonding stress from 31.8 MPa to 69.8 MPa, the average contact resistance decreased from 30 mil/bump to 15.6 mΩ/bump. With further increasing the bonding stress above 69.8 MPa, however, the average contact resistance changed little within the range of 12.9-15.6 mil/bump. Among the factors affecting the contact resistance with variation of the bonding stress, plastic deformation of the Sn/Ag bump had larger effect than the amount of the microvoids remaining at the contact interface between Sn/Ag bumps. (Received November 22, 2004) |