| Title |
Electronic,Magnetic & Optical Materials ; Thickness Dependence of Electrical Resistivity of High Purity Cu Films Deposited by Applying Substrate Bias Voltage |
| Authors |
임재원(Jae Won Lim); 배준우(Joon Woo Bae); (Makoto Mikami); (Kouji Mimura); (Minoru Isshiki) |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
Thin film; Copper; Electrical resistivity; Impurity; Surface scattering; Grain boundary scattering; Grain size |
| Abstract |
The thickness dependence of the electrical resistivity of high purity Cu films deposited by applying a negative substrate bias voltage of -50V was evaluated using the surface scattering of Fuch-Sondheimer (F-S) model and the grain boundary scattering of Mayadas-Shatzkes (M-S) model. For fitting the F-S and M-S models to the experimental data, we have used the approximate equations described by F-S and M-S models and have combined two approximate equations to propose a simple form. By fitting the theoretical model with the simple form, the electrical resistivity of Cu films was in a good agreement with the theoretical curve under the following condition; the film thickness is 2.2~2.3 times than the average grain size at the surface scattering coefficient p = 0, and the grain boundary reflection coefficient R = 0.24. Furthermore, it was found that the effect of resistivity increase produced by solute impurities in the Cu films could be ignored to evaluate the resistivity increase. |