The Journal of
the Korean Journal of Metals and Materials

The Journal of
the Korean Journal of Metals and Materials

Monthly
  • pISSN : 1738-8228
  • eISSN : 2288-8241

Editorial Office

Title Si Carrier Fabrication Using Si Anisotropic Property and the Application of Fine Pitch for Flip Chip Solder Bump
Authors 이규하(Kyu Ha Lee); 오은주(Eun Ju Oh); 홍성표(Sung Pyo Hong); 서창제(Chang Chae Shur)
Page pp.129-135
ISSN 1738-8228(ISSN), 2288-8241(eISSN)
Keywords Flip chip; Transformation; Si carrier
Abstract As the demand for flip chip products increases, the need for high volume, low cost manufacturing processes also increases. Currently solder paste printing is the solder deposition method of choice for device pitches down to 200 ㎛. However limitations in print quality and solder paste volume mean that this technology is not likely to move below this pitch. This paper provides transformation method of flip chip solder bump manufacturing using Si carrier. 150 ㎛ solder bump was formed by this method.