| Title |
Influence of Annealing on the Structure Electrical and Optical Properties of GaZnO Thin Films |
| Authors |
임근빈(Keun Bin Yim); 이종무(Chong Mu Lee) |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
GZO; RF magnetron sputtering; Ga doping; Transparent conducting oxides |
| Abstract |
Effects of annealing on the electrical resistivity and transmittance properties of Ga-doped ZnO (GZO) thin films deposited on glass by rf magnetron sputtering were investigated. The electrical resistivity of a GZO thin film is effectively decreased by annealing in a reducing atmosphere such as N2+5%H2. This is attributed to passivation of grain boundaries and zinc ions by hydrogen atoms resulting in increases in carrier concentration and mobility. However, annealing at a temperature higher than 400℃ is less effective. The lowest resistivity of 2.3 × 10(-4)Ωcm is obtained by annealing at 400℃ in an N2+5%H2 atmosphere. The optical transmittance of the GZO film is improved by annealing regardless of the annealing atmosphere. Annealing in N2+5%H2 atmosphere widens the optical band gap, while annealing in an O2 atmosphere makes the band gap narrower, which can be explained as a blue shift phenomenon. |