| Title |
Silicon On Insulator (SOI) Wafer Development using Plasma Source Ion Implantation (PSII) Technology |
| Authors |
정승진(Seung Jin Jung); 이성배(Sung Bae Lee); 한승희(Seung Hee Han); 임상호(Sang Ho Lim) |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
silicon on insulator; buried oxide; SPIMOX; PSII |
| Abstract |
PSII (Plasma Source Ion Implantation) using high density pulsed ICP source was employed to implant oxygen ions in Si wafer. The PSII technique can achieve a nominal oxygen dose of 3 × 10(17) atoms/cm2 in implantation time of about 20min. In order to prevent oxidation of SOI layer during high temperature annealing, the wafer was capped with 2,000A Si3N4 by PECVD. Cross-sectional TEM showed that continuous 500A thick buried oxide layer was formed with 300A thick top silicon layer in the sample. This study showed the possibility of SOI fabrication using the plasma source ion implantation with pulsed ICP source. |