| Title |
Electromigration and Thermomigration Characteristics in Flip Chip Sn-3.5Ag Solder Bump |
| Authors |
이장희(Jang Hee Lee); 임기태(Gi Tae Lim); 양승택(Seung Taek Yang); 서민석(Min Suk Suh); 정관호(Qwan Ho Chung); 변광유(Kwang Yoo Byun); 박영배(Young Bae Park) |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
electromigration; thermomigration; joule heating; flip chip Pb-free solder bump; Sn-3.5Ag solder |
| Abstract |
Electromigration test of flip chip solder bump is performed at 140℃ and 4.6×104A/㎠ conditions in order to compare electromigration with thermomigration behaviors by using electroplated Sn-3.5Ag solder bump with Cu under-bump-metallurgy. As a result of measuring resistance with stressing time, failure mechanism of solder bump was evaluated to have four steps by the fail time. Discrete steps of resistance change during electromigration test are directly compared with microstructural evolution of cross-ectioned solder bump at each step. Thermal gradient in solder bump is very high and the contribution of thermomigration to atomic flux is comparable with pure electromigration effect. |