| Title |
Effect of RF Power on the Structural, Optical and Electrical Properties of Amorphous InGaZnO Thin Films Prepared by RF Magnetron Sputtering |
| Authors |
신지훈(Ji Hoon Shin); 조영제(Young Je Cho); 최덕균(Duck Kyun Choi) |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
transparent oxide semiconductor; amorphous InGaZnO; a-IGZO; RF magnetron sputtering; RF power; thin film transistor |
| Abstract |
To investigate the effect of RF power on the structural, optical and electrical properties of amorphous InGaZnO (a-IGZO), its thin films and TFTs were prepared by RF magnetron sputtering method with different RF power conditions of 40, 80 and 120 W at room temperature. In this study, as RF power during the deposition process increases, the RMS roughness of a-IGZO films increased from 0.26 nm to 1.09 nm, while the optical band-gap decreased from 3.28 eV to 3.04 eV. In the case of the electrical characteristics of a-IGZO TFTs, the saturation mobility increased from 7.3 cm2/Vs to 17.0 cm2/Vs, but the threshold voltage decreased from 5.9 V to 3.9 V with increasing RF power. It is regarded that the increment of RF power increases the carrier concentration of the a-IGZO semiconductor layer due to the higher generation of oxygen vacancies. |