| Title |
Structural and Electrical Properties High Resistance of TiNxOy/TiNx Multi-Layer Thin Film Resistors |
| Authors |
박경우(Kyoung Woo Park); 허성기(Sung Gi Hur); 안준구(Jun Ku Ahn); 윤순길(Soon Gil Yoon); (Nguyen Duy Cuong) |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
thin film resistor; TiNxOy; TCR; thermal annealing; sputtering |
| Abstract |
TiNxOy/TiNx multi-layer thin films with a high resistance(~kΩ) were deposited on SiO2/Si substrates at room temperature by sputtering. The TiNx thin films show island and smooth surface morphology in samples prepared by α and RF magnetron sputtering, respectively. TiNxOy/TiNx multi-layer in has been developed to control temperature coefficient of resistance(TCR) by the incorporation of TiNx layer(positive TCR) inserted into TiNxOy layers(negative TCR). Electrical and structural properties of sputtered TiNxOy/TiNx multi-layer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multi-layer films were annealed at various temperatures in oxygen ambient. Samples annealed at 700℃ for 1 min exhibited good TCR value of approximately -54 ppm/℃ and a stable high resistivity around 20 kΩ/sq. with good reversibility. |