| Title |
Numerical Study of Melt Flow Pattern by Thermal Gradient of the Crucible in the Czochralski Process |
| Authors |
박종인(Jong In Park); 한정환(Jeong Whan Han) |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
Czochralski method; single crystal; silicon; computer simulation |
| Abstract |
It is well known that the temperature and the flow pattern of the crystal-melt interface affect the qualities of the single crystal in the Czochralski process. Thus the temperature profile in the growth system is very important information. This work focuses on controlling the temperature of the silicon melt with a thermal gradient of the crucible. Therefore, the side heater is divided into three parts and an extra heater is added at the bottom for thermal gradient. The temperature of the silicon melt can be strongly influenced and controlled by the electric power of each heater. |