| Title |
Effects of Film Thickness and Annealing Temperature on the Specific Contact Resistivity and the Transmittance of the IZO Layers Grown on p-GaN by Roll-to-Roll Sputtering |
| Authors |
김준영(Jun Young Kim); 한승철(Seung Cheol Han); 김재관(Jae Kwan Kim); 김한기(Han Ki Kim); 이지면(Ji Myon Lee) |
| DOI |
https://doi.org/10.3365/KJMM.2010.48.06.565 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
electrical/electronic materials; sputtering; electrical properties; electrical conductivity/resistivity; transmittance |
| Abstract |
We report on the characteristics of indium-oxide-doped ZnO (IZO) ohmic contact to p-GaN. The IZO ohmic contact layer was deposited on p-GaN by a Roll-to-Roll (RTR) sputter method. IZO contact film with a thickness of 360, 230 and 100 nm yielded an ohmic contact resistance of 4.70×10.4, 5.95×10.2, 4.85× 10.1 Ωcm2 on p-GaN when annealed at 600℃ for 1 min under a nitrogen ambient, respectively. While the transmittance of IZO film with a thickness of 360 nm slightly increased in the wavelength range of 380-800 nm after annealing, the transmittance rapidly increased up to 80% after annealing at 600℃ in the wavelength range of 380~430 nm because the crystallization of IZO film and created Ga vacancies near the p-GaN surface region were affected by the annealing. These results indicate that ohmic contact resistance and transmittance of the IZO films improved. |