| Title |
Nano-thick Nickel Silicide and Polycrystalline Silicon on Glass Substrate with Low Temperature Catalytic CVD |
| Authors |
송오성(Oh Sung Song); 김건일(Kun Il Kim); 최용윤(Yong Yoon Choi) |
| DOI |
https://doi.org/10.3365/KJMM.2010.48.07.660 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
amorphous matrials; deposition; crystallization; transmission electronmicroscopy; TEM; thin films |
| Abstract |
30 nm thick Ni layers were deposited on a glass substrate by e-beam evaporation. Subsequently, 30 nm or 60 nm α-Si:H layers were grown at low temperatures (<220℃) on the 30 nm Ni/Glass substrate by catalytic CVD (chemical vapor deposition). The sheet resistance, phase, microstructure, depth profile and surface roughness of the α-Si:H layers were examined using a four-point probe, HRXRD (high resolution Xray diffraction), Raman Spectroscopy, FE-SEM (field emission-scanning electron microscopy), TEM (transmission electron microscope) and AES depth profiler. The Ni layers reacted with Si to form NiSi layers with a low sheet resistance of 10Ω/□. The crystallinty of the α-Si:H layers on NiSi was up to 60% according to Raman spectroscopy. These results show that both nano-scale NiSi layers and crystalline Si layers can be formed simultaneously on a Ni deposited glass substrate using the proposed low temperature catalytic CVD process. |